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Michael J. Bedzyk, Professor
Department of Materials Science & Engineering

Northwestern University

E-mail: bedzyk@northwestern.edu
Phone: 847-491-3570

BS, State University of New York at Brockport (1973)
PhD, State University of New York at Albany (1982)

Visiting research scientist, Argonne National Laboratory
Spokesperson for X15A X-ray beam line, National Synchrotron Light Source, Brookhaven National Laboratory
Fellow of American Physical Society (1998)
Bertram Eugene Warren Diffraction Physics Award, American Crystallographic Association (1994)

Research Areas
Specializing in the use of atomic-scale X-ray synchrotron and surface sicence probes, the Bedzyk group studies nanostructures grown at the vacum/solid, liquid/solid, and solid/solid interfaces.

The Bedzyk group is using MBE, SPM, and x-ray techniques to explore nanostructure phenomena, such as, self-directed growth of nanodots on lithographically patterned substrates. Fig. 1 shows the case for 10 ML of Ge grown on an e-beam lithographically patterned Si(001) substrate. In situ LEED shows that the outer surfaces of the Ge dots are facetted with 4-fold symmetry consistent with a pyramid shape.

X-ray structural studies initiated at the Advanced Photon Source are used to characterize the strain fields and compositional gradients of such nanostructures at various stages of the growth process. (This is the Ph.D. thesis work of William Rodrigues. The e-beam lithography is in collaboration with John Ketterson's and Venkat Chandrasekhar's research groups in the Department of Physics & Astronomy.)


Related Publications
"Direct profiling and reversibility of ion distribution at a charged membrane/aqueous interface: An X-ray standing wave study," J. Wang, M. Caffrey, M.J. Bedzyk, and T.L. Penner, Langmuir, 17, 3671-3681 (2001).

"Atomic-scale observation of polarization switching in epitaxial ferroelectric thin films," D. L. Marasco, A. Kazimirov, M. J. Bedzyk, T. -L. Lee, S. K. Streiffer, O. Auciello, and G. -R. Bai, Appl. Phys. Lett., 79, 515 (2001).

"Probing the polarity of ferroelectric thin films with x-ray standing wave,s" M.J. Bedzyk, A. Kazimirov, D.L. Marasco, T.-L. Lee, C.M. Foster, G.-R. Bai, P.F. Lyman, D.T. Keane, Phys. Rev. B, 61, R7873-7876 (2000).

"Atomic-resolution study of lattice distortions of buried InxGa1-xAs monolayers in GaAs(001)," T. -L. Lee, M. Pillai, J.C. Woicik, G. Labanda, P. F. Lyman, S. A. Barnett, M. J. Bedzyk, Phys. Rev. B, 60, 13612-13618 (1999).

"Surfactant-Mediated Epitaxy of Metastable SnGe Alloys," P.F. Lyman, M.J. Bedzyk, Appl. Phys. Lett., 69, 978 (1996).

 

Fig. 1. (A.) Ex-situ AFM image of two self-organized quasi-periodic Ge nanodot linear arrays that form along the top outer edges of a 400-nm-wide stripe-mesa that was lithographically formed on a Si(001) substrate. (B.) Schematic view of a (100) cross-section of the Si mesa with Ge nanodots.
 

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